Catalog > Semiconductors > Discrete Semiconductors > Transistors N 900V 400V 8A 60MX TOP3 Isolated N 900V 400V 8A 60MX TOP3 Isolated Part No: BU426AF 10.35 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Transistor Type: NPN Silicon Power Transistor Collector‑Emitter Sustaining Voltage (V<sub>CEO(sus)</sub>): ≥ 400 V Collector‑Emitter Breakdown Voltage (V<sub>CEO</sub>): ~900 V Collector‑Base Voltage (V<sub>CBO</sub>): ~900 V Emitter‑Base Voltage (V<sub>EBO</sub>): ~10 V Continuous Collector Current (I<sub>C</sub>): ~6 A Peak / Pulse Collector Current: ~10 A Power Dissipation (P<sub>C</sub>): ~70 W (at 25 °C case temperature) Operating Junction Temperature: −65 °C to +150 °C Package: ISOWATT218 / TO‑3PML‑style high‑power package