Catalog > Semiconductors > Discrete Semiconductors > Transistors N 900V 400V 6A 30MN TO3A Transistor N 900V 400V 6A 30MN TO3A Part No: BU326A 11.36 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Transistor Type: NPN bipolar power transistor Package: TO‑3 metal can (high power package) Collector‑Emitter Voltage (Vceo): ~400 V (continuous) Collector‑Emitter Voltage (VCES rated with VBE = 0): ~900 V (max dielectric strength) Continuous Collector Current (Ic): ~6 A Peak Collector Current (Icm): ~8 A Power Dissipation: ~60–75 W (depending on source and conditions) Frequency / Transition: ~4 MHz typical Operating Temp: about –65 °C to 200 °C