Catalog > Semiconductors > Discrete Semiconductors > Transistors P 60V 7A 115W >45MHz TO3 Transistor P 60V 7A 115W >45MHz TO3 Part No: 2N5871 103.50 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 60 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 15 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 4 MHz Collector Capacitance (Cc): 300 pF Forward Current Transfer Ratio (hFE), MIN: 20