Catalog > Semiconductors > Discrete Semiconductors > Transistors 2SK1213 Transistor SIP MOS N-CH 600V 6A 125W 1.25R TO3P Part No: 2SK1213 18.11 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Pd - Maximum Power Dissipation: 125 W |Vds|- Maximum Drain-Source Voltage: 600 V |Vgs| - Maximum Gate-Source Voltage: 20 V |Id| - Maximum Drain Current: 6 A Tj - Maximum Junction Temperature: 150 °C Electrical Characteristics |VGSth| - Maximum Gate-Threshold Voltage: 3.5 V tr - Rise Time: 25 nS RDSon - Maximum Drain-Source On-State Resistance: 1.25 Ohm Package: TO3PN Downloads Datasheet - 2SK1213 PDF File 132.70 KB