Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor N Channel MOSFET Transistor SIP MOS N-CH 600V 6A 100W 1.25R TO220 Part No: 2SK1117 14.09 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Pd - Maximum Power Dissipation: 100 W |Vds|- Maximum Drain-Source Voltage: 600 V |Vgs|- Maximum Gate-Source Voltage: 20 V |Id| - Maximum Drain Current: 6 A Tj - Maximum Junction Temperature: 150 °C Electrical Characteristics |VGSth|- Maximum Gate-Threshold Voltage: 3.5 V tr - Rise Time: 25 nS Coss - Output Capacitance: 250 pF RDSon - Maximum Drain-Source On-State Resistance: 0.95 Ohm Downloads Datasheet - 2SK1117 PDF File 59.29 KB