P-Channel Enhancement Mode Power Mosfet [NCE01P30K] .::. Communica Online

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P-Channel Enhancement Mode Power Mosfet , VDS=-100V , ID=-30A , Maximum Power Dissipation:120W , Temp Range:-55~175℃ , RDS(ON)<58mΩ , TO-252-2L

Part No: NCE01P30K

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VDS =-100V,ID =-30A
- RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ)
- RDS(ON) <65mΩ @ VGS=-10V (Typ:48mΩ)
Super high dense cell design
Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance

Datasheet - NCE01P30K

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