Catalog > Semiconductors > Discrete Semiconductors > Transistors IRF530 SIP MOS N-Channel 100V 14A Part No: IRF530 12.08 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications VDS = 100V, ID = 15A RDS(ON) < 90mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.5V High-density cell design for lower Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for efficient heat dissipation 100% UIS TESTED! 100% DVDS TESTED! Absolute Maximum Ratings: Drain-Source Voltage (VDS): 100V Gate-Source Voltage (VGS): ±20V Continuous Drain Current (ID): 15A Pulsed Drain Current (IDM): 40A Maximum Power Dissipation (Tc=25℃): 31W Single Pulse Avalanche Energy (EAS): 21mJ Operating Junction and Storage Temperature Range: -55 To 175℃ Thermal Resistance, Junction-to-Case (RθJC): 4.8 ℃/W