Catalog > Semiconductors > Discrete Semiconductors > Transistors SIP MOS N-CH 500V 2,5A 3R TO220 SIP MOS N-CH 500V 2,5A 3R TO220 Part No: IRF820 13.23 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 Downloads Datasheet - IRF820 PDF File 128.20 KB