Catalog > Semiconductors > Discrete Semiconductors > Transistors IRF1010E SIP MOS N-Channel 60V 81A 0,012E 170W T0220AB Part No: IRF1010E 19.32 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Budgetary Price €/1k 0.51 ID (@25°C) max 84 A Mounting THT Operating Temperature min max -55 °C 175 °C Ptot max 170 W Package TO-220 Polarity N QG (typ @10V) 86.6 nC Qgd 29.3 nC RDS (on) (@10V) max 12 mΩ RthJC max 0.9 K/W Tj max 175 °C VDS max 60 V VGS(th) min max 3 V 2 V 4 V VGS max 20 V Downloads Datasheet - IRF1010E PDF File 159.24 KB