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N 60V 50V 150MA 60/1000 TO92 Silicon NPN Epitaxial Planar Transistor [KTC9014C]
N 60V 50V 150MA 60/1000 TO92 Silicon NPN Epitaxial Planar Transistor [KTC9014C]

Silicon NPN Epitaxial Planar Transistor

Transistor
N 60V 50V 150MA 60/1000 TO92 Silicon NPN Epitaxial Planar Transistor
Part No: KTC9014C
0.61 ZAR
inc
for 1 Each
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Package: TO-92, 1-emitter, 2-base, 3-collector.
  • Material of transistor: Si
  • Polarity: NPN
  • Total Devise power dissipation |PD|: 625 mW(at ambient temperature ≤ + 25 °)
  • Collector-base breakdown voltage |VCBO|: 60V
  • Collector-emitter breakdown voltage |VCEO|: 50V
  • Emitter-base breakdown voltage |VEBO|: 5V
  • Maximum collector current |Ic max|: 150mA
  • Maximum junction temperature |Tj|: +150 °C
  • Transition frequency (ft) : 60MHz(min.)
  • Output Capacitance |Cob|:3,5pF
  • Collector-emitter saturation voltage|VCE|:0,25V(IC=100mA,IB= 5mA).
  • Forward current transfer ratio |hFE| : 60-1000,(IC=1mA,VCE=5V), 200-600(C9014C)

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