NPN Silicon Power Bipolar Junction Transistor [MPSU02] .::. Communica Online

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N 60V 40V 800MA 50/300 X17 NPN Silicon Power Bipolar Junction Transistor [MPSU02]

NPN Silicon Power Bipolar Junction Transistor

Transistor

N 60V 40V 800MA 50/300 X17 NPN Silicon Power Bipolar Junction Transistor

Part No: MPSU02

	3.29	ZAR
		inc
for 1 Each

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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: X17