Catalog > Semiconductors > Discrete Semiconductors > Transistors BUZ93 Transistor SIP MOS N 600V 3,6A 80W 2,5R TO220 Part No: BUZ93 12.16 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Maximum Power Dissipation: 80 W Maximum Drain-Source Voltage: 600 V Maximum Gate-Source Voltage: 20 V Maximum Drain Current: 3.6 A Maximum Junction Temperature: 150 °C Electrical Characteristics Maximum Gate-Threshold Voltage: 4 V Rise Time: 50 nS Output Capacitance: 65 pF Maximum Drain-Source On-State Resistance: 2.5 Ohm Package: TO-220AB