Catalog > Semiconductors > Discrete Semiconductors > Transistors SI-P 160V 1.5A 25W 100MHz Bipolar Junction Transistor P 160V 1.5A 25W 100MHZ TO220 Part No: 2SA968 3.42 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type: PNP Collector-Emitter Voltage, max: -160 V Collector-Base Voltage, max: -160 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -1.5 A Collector Dissipation: 25 W DC Current Gain (hfe): 70 to 240 Transition Frequency, min: 100 MHz Operating and Storage Junction Temperature Range: -55 to +150 °C Package: TO-220 Additional Information Polarity PNP Material Silicon Power Dissipation 25A