Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor N 300V 225V 100mA 20MN TO39 Part No: BF337 4.01 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Maximum Collector Power Dissipation (Pc): 0.8 W Maximum Collector-Base Voltage |Vcb|: 300 V Maximum Collector-Emitter Voltage |Vce|: 225 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 200 °C Electrical Characteristics Transition Frequency (ft): 80 MHz Collector Capacitance (Cc): 6 pF Forward Current Transfer Ratio (hFE), MIN: 20