Catalog > Semiconductors > Discrete Semiconductors > Transistors SIP MOS N 200V 3,3A 1,5R TO220 SIP MOS N-Channel 200V 3,3A 1,5R TO220 Part No: IRF610 9.06 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 36 W Maximum Drain-Source Voltage |Vds|: 200 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 3.3 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 8.2(max) nC Rise Time (tr): 17 nS Drain-Source Capacitance (Cd): 53 pF Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm Downloads Datasheet - IRF610 PDF File 131.18 KB