| Type |
Transistor Silicon NPN |
| Case |
TO126 |
| Vbr CBO |
32 |
| Vbr CEO |
32 |
| Max. PD (W) |
36 |
| Min hFE |
25 |
| Ic Max. (A) |
4.0 |
| @Ic (test) (A) |
10m |
| Icbo Max. @Vcb Max. (A) |
50u |
| Polarity |
NPN |
| R(sat) (Û) |
250m |
| Derate Above 25°C |
285m |
| Trans. Freq (Hz) Min. |
7.0M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
36 W |
| Maximum Collector-Base Voltage |Vcb| |
32 V |
| Maximum Collector-Emitter Voltage |Vce| |
32 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
4 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
50 |