Catalog > Semiconductors > Discrete Semiconductors > Transistors Silicon NPN Darlington Power Transistor Transistor Silicon NPN Darlington Power Transistor Part No: 2SD1376 3.42 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 1.5 A Max. Operating Junction Temperature (Tj): 150 °C Electrical Characteristics Forward Current Transfer Ratio (hFE), MIN: 15000