Catalog > Semiconductors > Discrete Semiconductors > Transistors SI-P 25V 1A 0.9W 180MHz Bipolar Junction Transistor P 25V 1A Part No: 2SB544 1.94 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type Designator: 2SB544 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.9 W Maximum Collector-Base Voltage |Vcb|: 25 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 90 MHz Collector Capacitance (Cc): 50 pF Forward Current Transfer Ratio (hFE), MIN: 60 Noise Figure, dB: - Package: TO92 Additional Information Polarity PNP Material Silicon Power Dissipation 0.9A