• Device Type: Static Random Access Memory (SRAM)
• Memory Organization: 16K × 1 Bit
• Total Memory Capacity: 16 Kbits (16,384 bits)
• Package Type: 20-Pin DIP (typical)

Memory Characteristics

• Organization: 16,384 × 1 bit
• Technology: CMOS Silicon-Gate Process
• Static Memory (No Refresh Required)
• TTL-Compatible Inputs and Outputs
• Single +5 V power supply operation

Speed Grade

• -45 Suffix
  • Access Time: 45 ns (maximum)
  • High-speed version of the MB81C67 family

Electrical Characteristics

• Supply Voltage (VCC):
  • 5 V ±10%
  • Operating Range: 4.5 V to 5.5 V
• CMOS Low-Power Design
• TTL-Compatible Interface

Control Signals

• CE — Chip Enable
• WE — Write Enable
• OE — Output Enable
• A0–A13 — Address Inputs
• DQ — Data Input/Output

Performance Features

• Fast 45 ns access time
• Fully static operation
• No refresh circuitry required
• Low standby power consumption
• Suitable for high-speed microprocessor systems

Package Information

• Package: DIP-20
• Pin Count: 20 Pins
• Mounting Style: Through-Hole

Operating Temperature

• Commercial Version:
  • 0°C to +70°C

Typical Applications

• Microprocessor memory expansion
• Industrial control systems
• Telecommunications equipment
• Test and measurement instruments
• Embedded controllers
• Legacy computer systems
• Digital control equipment