Catalog > Semiconductors > Discrete Semiconductors > Transistors N 400V 350V 20A 40MN TO3 Transistor N 400V 350V 20A 40MN TO3 Part No: GE6060 40.77 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Collector–Base Voltage (VCBO): 400 V Collector–Emitter Voltage (VCEO): 350 V Emitter–Base Voltage (VEBO): 5 V Collector Current (IC): 20 A continuous Peak repetitive: 25 A Non-repetitive pulse: 42.5 A Total Power Dissipation (PC): 125 W Junction & Storage Temperature (TJ, Tstg): –65 °C to +150 °C