Catalog > Semiconductors > Discrete Semiconductors > Transistors NPN Silicon Bipolar Junction Transistor Transistor NPN Silicon Bipolar Junction Transistor Part No: 2N910 14.24 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.5 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 60 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 0.2 A Max. Operating Junction Temperature (Tj): 175 °C Electrical Characteristics Transition Frequency (ft): 60 MHz Collector Capacitance (Cc): 15 pF Forward Current Transfer Ratio (hFE), MIN: 75 Noise Figure, dB: - Package: TO18