Catalog > Semiconductors > Discrete Semiconductors > Transistors Silicon Diffused Power Transistor Transistor SI-N+D 1500V 8A 34W 0.7us Silicon Diffused Power Transistor Part No: BU508DF 20.64 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 34 W Maximum Collector-Base Voltage |Vcb|: 1500 V Maximum Collector-Emitter Voltage |Vce|: 700 V Maximum Collector Current |Ic max|: 8 A Max. Operating Junction Temperature (Tj): 150 °C Electrical Characteristics Transition Frequency (ft): 7 MHz Collector Capacitance (Cc): 125 pF Forward Current Transfer Ratio (hFE), MIN: 10 Package: ISOTOP3