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Silicon PIN Photo Diode 430 to 1100nM 5ns switching 215mW 5,4 x 4,3 Rect. Pkg [BPW34]
Silicon PIN Photo Diode 430 to 1100nM 5ns switching 215mW 5,4 x 4,3 Rect. Pkg [BPW34]

Silicon Pin Photo Diode

Silicon Pin Photo Diode
Silicon PIN Photo Diode 430 to 1100nM 5ns switching 215mW 5,4 x 4,3 Rect. Pkg
Part No: BPW34
30.12 ZAR
inc
for 1 Each
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Features

  • Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
  • Radiant sensitive area (in mm2): 7.5
  • High photo sensitivity
  • High radiant sensitivity
  • Suitable for visible and near infrared radiation
  • Fast response times
  • Angle of half sensitivity: ϕ = ± 65°

Specifications

Wavelength
900nm
Spectral Range
430nm ~ 1100nm
Diode Type
PIN
Voltage - DC Reverse (Vr) (Max)
60 V
Current - Dark (Typ)
2nA
Active Area
7.5mm²
Viewing Angle
130°
Operating Temperature
-40°C ~ 100°C
Mounting Type
Through Hole
Package / Case
2-DIP

Downloads

PDF File
111.30 KB

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