• Device Type: Non-Volatile Serial Memory (EAROM)
• Technology: MNOS (Metal Nitride Oxide Semiconductor)
• Package Type: PDIP-14 (14-Pin Plastic DIP)

Memory Organization

• Total Memory Capacity: 700 Bits
• Organization: 50 Words × 14 Bits
• Memory Type: Electrically Erasable and Reprogrammable ROM (EAROM)
• Serial Input / Output Architecture
• One-Bit Bidirectional Data Bus

Electrical Characteristics

• Logic Supply Voltage (VSS):
  • +5 V
• Programming Voltage (VGG):
  • -30 V Typical
• I/O Interface:
  • 5 V Compatible
• Write/Erase Time:
  • 20 ms per word (typical)

Data Retention & Endurance

• Data Retention:
  • Minimum 10 years
• Erase/Write Endurance:
  • Minimum 100,000 cycles (10⁵)
• Read Access Retention:
  • Minimum 1,000,000,000 reads (10⁹) without refresh

Control Interface

• Data Input/Output Pin
• Clock Input (CLK)
• Mode Control Inputs:
  • C1
  • C2
  • C3

Operating Modes

The IC supports seven operating modes:

• Accept Address
• Accept Data
• Shift Data Output
• Read
• Write
• Erase
• Standby

Mode selection is performed through the C1, C2 and C3 control pins.

Addressing

• Addresses are entered serially
• Uses two consecutive one-of-ten coded digits for address selection
• Internal memory array:
  • 50 words × 14 bits

Package

• Package Type: Plastic DIP
• Pin Count: 14 Pins
• Mounting: Through-Hole