Catalog > Semiconductors > Integrated Circuits MB81256-10 IC MOS 262,144 bit Dynamic Random Access Memory 16 Pin DIP Part No: MB81256-10 Call for Price (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Device Type: High-Speed Static RAM Memory Organization: 32K × 8 Bits Total Capacity: 256 Kbits (262,144 bits) Package Type: 28-Pin DIP / SOP variants Memory Characteristics Memory Size: 32,768 × 8 bits Total Storage: 256 Kbits Static RAM (SRAM) No refresh required Fully TTL-compatible Speed Grade -10 Suffix: Access Time: 100 ns maximum Cycle Time: 100 ns maximum Electrical Characteristics Supply Voltage (VCC): 5 V ±10% Operating Range: 4.5 V to 5.5 V Operating Current: Typically 70–100 mA Depends on operating conditions Standby Current: Typically a few microamps (CMOS standby) Inputs and Outputs Address Inputs: 15 A0–A14 Data Inputs/Outputs: 8 I/O0–I/O7 Control Signals: CE (Chip Enable) OE (Output Enable) WE (Write Enable) Three-state output buffers Operating Modes Read Write Standby Output Disable Performance Features High-speed CMOS technology Low standby power consumption Direct microprocessor interface Fast access and cycle times Fully static operation Package Information Pin Count: 28 Pins Mounting Style: Through-Hole (DIP) or Surface Mount (SOP) Operating Temperature Commercial Version: 0°C to +70°C Storage: -55°C to +125°C Typical Applications Embedded systems Industrial controllers Telecommunications equipment Instrumentation Data acquisition systems Printer controllers Video equipment Microprocessor memory expansion Key Features 32K × 8 organization 100 ns access time 5 V operation Low-power CMOS technology Three-state outputs No refresh required Direct CPU interface 28-pin package