Catalog > Semiconductors > Discrete Semiconductors > Transistors P 30V 0.1A 120MHz Bipolar Junction Transistor P 30V 0.1A 120MHz Part No: 2SB641 0.72 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type Designator: 2SB641 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.4 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 0.1 A Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 150(typ) MHz Collector Capacitance (Cc): 3.5 pF Forward Current Transfer Ratio (hFE), MIN: 160 Noise Figure, dB: - Package: SC71 Additional Information Polarity PNP Material Silicon Power Dissipation 0.4A