Catalog > Semiconductors > Discrete Semiconductors > Transistors P 300V 50MA 50MN TO126 Bipolar Junction Transistor P 300V 50MA 50MN TO126 Part No: BF472 2.15 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type Designator: BF472 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 2 W Maximum Collector-Base Voltage |Vcb|: 300 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.1 A Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 60 MHz Collector Capacitance (Cc): 1.8 pF Forward Current Transfer Ratio (hFE), MIN: 50 Noise Figure, dB: - Package: TO126 Additional Information Polarity PNP Material Silicon Power Dissipation 2A