Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor P 60V 60V 1A 63/160 TO126 Transistor Part No: BD138-10 1.93 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 12.5 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 60 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1.5 A Max. Operating Junction Temperature (Tj): 150 °C Electrical Characteristics Transition Frequency (ft): 50 MHz Forward Current Transfer Ratio (hFE), MIN: 40 Package: TO126