| Case |
TO50 |
| Vbr CBO |
25 |
| @Freq. (test) |
500M |
| @Ic (A) |
10m |
| @Ic (A) |
25m |
| Mat. |
Silicon Logic |
| Noise Fig. |
2.7 |
| Oper. Gain Typ (S21) |
16 |
| f(osc) Max. (Hz) |
4.5G |
| Polarity |
NPN |
| PD Max. (W) |
180m |
| S11 Deg. (Typ) |
-166 |
| S11 Mag Typ. |
0.08 |
| S22 Deg. Typ. |
-19 |
| S22 Mag Typ. |
0.47 |
| @VDS (VCE) (test) (V) |
10 |
| Coll. (or drain) Current Max. |
35m |
| @Freq. (test) |
500M |
| @VCE (test) |
10 |
| Oper. Temp (°C) Max. |
150 |
| Pinout Equivalence Number |
3-16 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.13 W |
| Maximum Collector-Base Voltage |Vcb| |
25 V |
| Maximum Collector-Emitter Voltage |Vce| |
15 V |
| Maximum Emitter-Base Voltage |Veb| |
2 V |
| Maximum Collector Current |Ic max| |
0.025 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
1.4 pF |
| Transition Frequency (ft): |
1000 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |