Catalog > Semiconductors > Discrete Semiconductors > Transistors 2SA1357 Bipolar Junction Transistor P 35V 5A 10W 170MHz Part No: 2SA1357 7.38 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type: PNP Collector-Emitter Voltage, max: -20 V Collector-Base Voltage, max: -35 V Emitter-Base Voltage, max: -8 V Collector Current − Continuous, max: -5 A Collector Dissipation: 10 W DC Current Gain (hfe): 100 to 320 Transition Frequency, min: 170 MHz Operating and Storage Junction Temperature Range: -55 to +150 °C Package: TO-126F Additional Information Polarity PNP Material Silicon Power Dissipation 10A