Catalog > Semiconductors > Discrete Semiconductors > Transistors P 150V 4A 20MN 50W TO220 Bipolar Junction Transistor P 150V 4A 20MN 50W TO220 Part No: MJE15031 18.69 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type: PNP Collector-Emitter Voltage, max: -150 V Collector-Base Voltage, max: -150 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -8 A Collector Dissipation: 50 W DC Current Gain (hfe): 40 Transition Frequency, min: 30 MHz Operating and Storage Junction Temperature Range: -65 to +150 °C Package: TO-220