Catalog > Semiconductors > Discrete Semiconductors > Transistors NPN Silicon Transistor Transistor Si-P Dual-ra 60V 100ma 110Mhz TO-5 Part No: BFX36 11.44 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Features Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.6 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 60 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 200 °C Electrical Characteristics Transition Frequency (ft): 55 MHz Collector Capacitance (Cc): 5 pF Forward Current Transfer Ratio (hFE), MIN: 100 Package: TO77