Catalog > Semiconductors > Discrete Semiconductors > Transistors P 160V 12A TO3PN Bipolar Junction Transistor P 160V 12A TO3PN Part No: 2SB817 17.19 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type: PNP Collector-Emitter Voltage, max: -140 V Collector-Base Voltage, max: -160 V Emitter-Base Voltage, max: -6 V Collector Current − Continuous, max: -12 A Collector Dissipation: 100 W DC Current Gain (hfe): 60 to 200 Transition Frequency, min: 15 MHz Operating and Storage Junction Temperature Range: -40 to +150 °C Package: TO-3P