Catalog > Semiconductors > Discrete Semiconductors > Transistors N-Channel Mosfet Transistor Transistor SIP MOS N 200V 9,9A 78W 0,40R Transistor Part No: BUZ35 34.85 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Maximum Power Dissipation: 78 W Maximum Drain-Source Voltage: 200 V Maximum Drain Current: 9.9 A Maximum Junction Temperature: 150 °C Electrical Characteristics Maximum Gate-Threshold Voltage: 4 V Maximum Drain-Source On-State Resistance: 0.4 Ohm Package: TO3