Catalog > Semiconductors > Discrete Semiconductors > Transistors IRF9610 Transistor SIP MOS P 200V 1,75A 3R TO220 Part No: IRF9610 12.54 ZAR inc for 1 Each (Quoting) Add to Cart Buy Now Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 900mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V Power Dissipation (Max) 20W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Downloads Datasheet - IRF9610 PDF File 129.93 KB