Catalog > Semiconductors > Discrete Semiconductors > Transistors P 30V 25V 100MA 125MN X10 30V 25V 100MA 125MN X10 Transistor P 30V 25V 100MA 125MN X10 Part No: BC558A 0.47 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type Designator: BC558A Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.5 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.1 A Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 75 MHz Collector Capacitance (Cc): 7 pF Forward Current Transfer Ratio (hFE), MIN: 125 Noise Figure, dB: - Package: TO92