• Device Type: Static Random Access Memory (SRAM)
• Memory Organization: 1024 × 4 Bits
• Technology: Bipolar / NMOS Memory Technology (depending on version)

Memory Characteristics

• Total Memory Capacity: 4 Kbits
• Organization: 1K Words × 4 Bits
• Access Type: Static RAM
• No Refresh Required
• Read/Write Memory

Electrical Characteristics

• Supply Voltage (VCC):
  • 5 V ±10%
• Input Logic Levels:
  • TTL Compatible
• Output Type:
  • Three-State Outputs

Performance

• Access Time:
  • Typical versions:
    • 250 ns
    • 300 ns
    • 450 ns
  • Speed grade dependent
• Cycle Time:
  • Approximately equal to access time

Addressing

• Address Inputs: 10
• Address Range: 000H to 3FFH
• Data Inputs/Outputs: 4 Bits

Control Inputs

• CS (Chip Select)
• WE (Write Enable)
• OE (Output Enable) (version dependent)

Package

• Package Type: DIP
• Pin Count: 18 Pins
• Mounting Style: Through-Hole

Operating Temperature

• Commercial Grade: 0°C to +70°C
• Storage Temperature: -55°C to +125°C