Catalog > Semiconductors > Discrete Semiconductors > Transistors N 30V 20V 100mA 200MN TO18 Transistor Transistor N 30V 20V 100mA 200MN TO18 Transistor Part No: BC108B 10.64 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Maximum Collector Power Dissipation (Pc): 0.3 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 20 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 175 °C Electrical Characteristics Transition Frequency (ft): 150 MHz Collector Capacitance (Cc): 5 pF Forward Current Transfer Ratio (hFE), MIN: 200 Downloads Datasheet - BC108B PDF File 259.49 KB