| Channel Type |
N |
| Maximum Continuous Drain Current |
23 A |
| Maximum Drain Source Voltage |
150 V |
| Package Type |
TO-220AB |
| Mounting Type |
Through Hole |
| Pin Count |
3 |
| Maximum Drain Source Resistance |
90 mΩ |
| Channel Mode |
Enhancement |
| Maximum Gate Threshold Voltage |
5.5V |
| Minimum Gate Threshold Voltage |
3V |
| Maximum Power Dissipation |
136 W |
| Transistor Configuration |
Single |
| Maximum Gate Source Voltage |
-30 V, +30 V |
| Number of Elements per Chip |
1 |
| Length |
10.54mm |
| Maximum Operating Temperature |
+175 °C |
| Transistor Material |
Si |
| Typical Gate Charge @ Vgs |
37 nC @ 10 V |
| Width |
4.69mm |
| Minimum Operating Temperature |
-55 °C |
| Height |
19.3mm |
| Series |
HEXFET |