Catalog > Semiconductors > Discrete Semiconductors > Transistors P 80V 80V 8A 750MN TO3 Transistor P 80V 80V 8A 750MN TO3 Part No: MJ901 9.78 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of transistor: Si Polarity: PNP Maximum collector power dissipation (Pc), W: 90 Maximum collector-base voltage |Ucb|, V: 80 Maximum collector-emitter voltage |Uce|, V: 80 Maximum emitter-base voltage |Ueb|, V: 5 Maximum collector current |Ic max|, A: 10 Maksimalna temperatura (Tj), °C: 200 Transition frequency (ft), MHz: Collector capacitance (Cc), pF: Forward current transfer ratio (hFE), min: 750 Package of MJ901 transistor: TO3 Downloads Datasheet - MJ901 PDF File 170.08 KB