Catalog > Semiconductors > Discrete Semiconductors > Transistors P 300V 300V 500MA 30MN TO126 Bipolar Junction Transistor P 300V 300V 500MA 30MN TO126 Part No: MJE350 7.76 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type: PNP Collector-Emitter Voltage, max: -300 V Collector-Base Voltage, max: -300 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -0.5 A Collector Dissipation: 20 W DC Current Gain (hfe): 30 to 240 Operating and Storage Junction Temperature Range: -65 to +150 °C Package: TO-126