• Memory Organization: 32K × 8 bits
• Memory Capacity: 256 Kbit (262,144 bits)
• Device Type: Static RAM (SRAM)

Memory Characteristics

• Organization: 32,768 × 8 bits
• Address Lines: 15 (A0–A14)
• Data I/O Lines: 8 (I/O0–I/O7)
• No Refresh Required
• Three-State Outputs

Speed Grade

• -10 Suffix
  • Access Time: 100 ns (maximum)
  • Read Cycle Time: 100 ns
  • Write Cycle Time: 100 ns

Electrical Characteristics

• Supply Voltage (VCC):
  • 5 V ±10%
  • Operating Range: 4.5 V to 5.5 V
• Operating Current:
  • Typically 80–120 mA
• Standby Current:
  • Typically less than 1 mA
  • CMOS low-power standby mode

Control Signals

• CE – Chip Enable
• OE – Output Enable
• WE – Write Enable

Package Information

• Package Code: PSZ
• Package Type: 28-Pin Plastic ZIP (Zig-Zag In-Line Package)
• Mounting Style: Through-Hole
• Pin Count: 28

Operating Temperature

• Commercial Temperature Range:
  • 0°C to +70°C