Catalog > Semiconductors > Discrete Semiconductors > Transistors MOSFET 600V N-Channel 600V / N-Channel MOSFET N-MOSFET 600V 2A 23W 4.7 Ω TO-220F Part No: FQPF2N60C 11.65 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage : 600 V Id - Continuous Drain Current : 2 A Rds On - Drain-Source Resistance : 4.7 Ohms Vgs - Gate-Source Voltage : - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage : 2 V Qg - Gate Charge : 12 nC Minimum Operating Temperature : - 55 C Maximum Operating Temperature : + 150 C Pd - Power Dissipation : 23 W Downloads Datasheet - FQPF2N60C PDF File 1.40 MB