Catalog > Semiconductors > Discrete Semiconductors > Transistors P 120V 8A 80W 65MHZ 120V 8A 80W 65MHZ Transistor P 120V 8A 80W 65MHZ Part No: 2SB966 7.96 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type: PNP Collector-Emitter Voltage, max: -120 V Collector-Base Voltage, max: -120 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -8 A Collector Dissipation: 80 W DC Current Gain (hfe): 60 to 320 Transition Frequency, min: 65 MHz Operating and Storage Junction Temperature Range: -55 to +150 °C Package: TO-3P