Catalog > Semiconductors > Discrete Semiconductors > Transistors N-CH MOSFET 600V 80A Rds N-CH / 600V / 80A / Rds MOSFET N-CH MOSFET 600V 80A Rds On (Max) 32mΩ TO247AC Part No: SIHG80N60EF-GE3 109.25 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 32mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 100 V Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 Downloads Datasheet - SIHG80N60EF-GE3 PDF File 464.23 KB