Catalog > Semiconductors > Discrete Semiconductors > Transistors BU110 Si NPN Power BJT 1 MHz 10A 330V Part No: BU110 28.75 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 60 W Maximum Collector-Base Voltage |Vcb|: 330 V Maximum Collector-Emitter Voltage |Vce|: 150 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 115 °C Electrical Characteristics Transition Frequency (ft): 15 MHz Forward Current Transfer Ratio (hFE), MIN: 8 Package: TO3