Catalog > Semiconductors > Discrete Semiconductors > Transistors P 80V 80V 4A 15MN TO126 Transistor P 80V 80V 4A 15MN TO126 Part No: BD442 3.16 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 36 W Maximum Collector-Base Voltage |Vcb|: 80 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 4 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 3 MHz Forward Current Transfer Ratio (hFE), MIN: 15 Package: TO126