Catalog > Semiconductors > Discrete Semiconductors > Transistors P 80V 20A 150W 4MHz TO-3-2 Transistor SI-N 80V 10A 150W >4MHz Part No: 2N5878 9.14 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Mounting Style: Through Hole Package/Case: TO-3-2 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 80 V Collector- Base Voltage VCBO: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 20 A Pd - Power Dissipation: 150 W Gain Bandwidth Product fT: 4 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Continuous Collector Current: 10 A DC Collector/Base Gain hFE Min: 35 at 1 A, 4 V DC Current Gain hFE Max: 100 at 4 A, 4 V Product Type: BJTs - Bipolar Transistors