Catalog > Semiconductors > Discrete Semiconductors > Transistors IRF9530 Transistor MOSFET P-Channel 100V 12A TO220AB Part No: IRF9530 17.19 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V Power Dissipation (Max) 88W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Downloads Datasheet - IRF9530 PDF File 153.93 KB