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P 80V 65V 100MA 250MW SOT23 [BC856B]
P 80V 65V 100MA 250MW SOT23 [BC856B]

P 80V 65V 100MA 250MW SOT23

Bipolar Junction Transistor
P 80V 65V 100MA 250MW SOT23
Part No: BC856B
0.92 ZAR
inc
for 1 Each
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Transistor Type PNP
Maximum DC Collector Current -100 mA
Maximum Collector Emitter Voltage -65 V
Package Type SOT-23 (TO-236AB)
Mounting Type Surface Mount
Maximum Power Dissipation 250 mW
Minimum DC Current Gain 220
Transistor Configuration Single
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 100 MHz
Pin Count 3
Number of Elements per Chip 1
Dimensions 1 x 3 x 1.4mm
Maximum Operating Temperature +150 °C

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